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Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2018

Simulation of Single Particle Displacement Damage in Silicon – Part III: First Principles Characterization of Defect Properties

Résumé

A first principles study of the defects generated by displacement cascades in silicon is performed. This work is particularly focused on two defect configurations; the di-vacancy and the tri-interstitial, both identified in previous Molecular Dynamics (MD) and kinetic Activation Relaxation Technique (k-ART) simulations [1, 2]. By combining structural, energy and migration properties evaluated within the framework of the standard Density Functional Theory (DFT) and electronic properties calculated within the G 0 W 0 approximation, a reconstruction of the corresponding thermally-activated electrical signal generated by each defect is obtained. Their contribution to Dark Current (DC) and Dark Current Random Telegraph Signal (DC-RTS) measured in image sensors is then discussed.
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Dates et versions

hal-01685608 , version 1 (16-01-2018)

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Antoine Jay, Anne Hémeryck, Nicolas Richard, Layla Martin-Samos, Melanie Raine, et al.. Simulation of Single Particle Displacement Damage in Silicon – Part III: First Principles Characterization of Defect Properties. IEEE Transactions on Nuclear Science, 2018, 65 (2), pp.724-731. ⟨10.1109/TNS.2018.2790843⟩. ⟨hal-01685608⟩
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